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In BJT to avoid Punch-through

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In BJT to avoid Punch-through
  • ACollector doping should be high and base doping should be low
  • BCollector doping should be low and base doping should be high
  • CDoping of both sides should be equal
  • DEither “collector doping should be high and base doping should be low” or “collector doping should be low and base doping should be high”
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- In a BJT punch-through condition occurs when the base to collector reverse voltage causes widening of depletion region such that the entire base width is covered by depletion region.

- It can be avoided by increasing base width or by increasing base doping and by decreasing collector doping (since the width of the depletion region in one side of the junction is inversely proportional to doping concentration).